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Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 470-473

Dopant interaction with a dislocation in silicon: Local and non-local effects

(3) Antonelli, Alex a Justo, João F b Fazzio, A b

a UNIVERSITY OF CAMPINAS (Brazil)

b UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

Dislocation; Extended defects; Segregation

Indexed keywords

APPROXIMATION THEORY; ARSENIC; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); ELECTRONS; ELECTROSTATICS; PROBABILITY DENSITY FUNCTION;

LOCAL DENSITY APPROXIMATION;

SEMICONDUCTING SILICON;

EID: 0035670852 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00743-8 Document Type: Article

Times cited : (1)

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