Heteroepitaxial growth of GaAs films on Si substrates using ion beams, neutral molecular beams, and their mixtures

Thin Solid Films

Volumn 349, Issue 1, 1999, Pages 84-92

  Yokota, Katsuhiro ^a   Tamura, Susumu ^a  

^a KANSAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; ION BEAMS; MIXTURES; MOLECULAR BEAMS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS;

STICKING COEFFICIENTS;

SEMICONDUCTING FILMS;

EID: 0032644953     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00185-6     Document Type: Article

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