|
|
Volumn 16, Issue 3, 2001, Pages
|
|
The effect of substrate temperature on the isolation of n-type GaAs layers using MeV boron implantation
a
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
CRYSTAL DEFECTS;
ELECTRIC CONDUCTIVITY;
INTEGRATED CIRCUIT LAYOUT;
ION IMPLANTATION;
POSITIVE IONS;
RAPID THERMAL ANNEALING;
SEMICONDUCTING BORON;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING SILICON;
SUBSTRATES;
THERMAL EFFECTS;
THERMODYNAMIC STABILITY;
MULTI-ENERGY IMPLANTS;
THERMALLY STABLE DEFECTS;
SEMICONDUCTING FILMS;
|
|
EID: 0035280796
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/16/3/102 Document Type: Article |
|
Times cited : (11)
|
|
References (15)
|
