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Journal of Applied Physics

Volumn 65, Issue 4, 1989, Pages 1566-1570

Evidence for the electron traps at dislocations in GaAs crystals

(1) Wosiński, Tadeusz a,b

a INSTITUTE OF PHYSICS (Poland)

b UNIVERSITY OF GÖTTINGEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36549098958 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.342974 Document Type: Article

Times cited : (189)

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