Self-heating effects of GaN FETs for high power microwave applications

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Volumn , Issue , 2001, Pages 119-123

  Tam, C K ^a   Koon, K L ^a   Hu, Z R ^a   Rezazadeh, A ^a  

^a KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CURRENTS; GALLIUM NITRIDE; HEAT SINKS; HEAT TRANSFER; POISSON EQUATION; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS;

COUPLED ELECTRICAL EQUATION; ELECTRICAL FIELD BREAKDOWN; HEAT FLOW; HEAT TRANSFER EQUATION; HIGH SATURATED DRIFT VELOCITY; LATTICE TEMPERATURE; POWER DENSITY; SELF HEATING EFFECTS; WIDE-BANDGAP SEMICONDUCTOR DEVICES;

MESFET DEVICES;

EID: 0035573259     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. GaN microwave electronics
2. High power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates
3. Power performance and scalability of AlGaN/GaN power MODFETs
4. AlGaN/GaN heterostructure field-effect transistor model including thermal effects
5. Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling