On the nature of ultra-thin gate oxide degradation during pulse stressing of nMOSCAPs

International Integrated Reliability Workshop Final Report

Volumn , Issue , 2001, Pages 87-88

  Knowlton, William B ^a   Kumar, Santosh ^a   Caldwell, Theodora ^a   Gomez, Jose J ^a   Cheek, Betsy ^a  

^a Boise State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; MOS CAPACITORS; STATIC RANDOM ACCESS STORAGE;

PULSE STRESS TESTING (PVS);

GATES (TRANSISTOR);

EID: 0035568797     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)