Effect of stress interruption and pulsed biased stress on ultra-thin gate dielectric reliability

International Integrated Reliability Workshop Final Report

Volumn , Issue , 2000, Pages 74-79

  Wang, Bin ^a   Suehle, J S ^a   Vogel, E M ^a   Bernstein, J B ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); LEAKAGE CURRENTS; RELIABILITY; ULTRATHIN FILMS;

PULSE REPETITION FREQUENCIES; STRESS INTERRUPTION EFFECTS;

DIELECTRIC FILMS;

EID: 0034429199     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)