Low resistance optically transparent contacts to p-type GaN using oxidized Ni/Au and ITO for LED application

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Lin, C H ^a   Hibbard, D L ^a   Au, A ^a   Lee, H P ^a   Dong, Z J ^a   Szalkowski, F J ^a   Chen, J ^a   Chen, C ^a  

^a University of California at Irvine   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; GOLD; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; NICKEL;

CURRENT SPREADING LAYER; HIGH TRANSPARENCY LOW RESISTANCE CONTACT; INDIUM TIN OXIDE; SPECIFIC CONTACT RESISTIVITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035559857     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)