High density plasma etching damage effects on contacts to n-GaN

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Singh, Rajwinder ^a   Eddy Jr , C R ^a   Moustakas, T D ^a  

^a BOSTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; DEGRADATION; DOPING (ADDITIVES); OHMIC CONTACTS; PLASMA DENSITY; PLASMA ETCHING;

DOPING LEVELS; HIGH DENSITY PLASMA ETCHING DAMAGE EFFECTS;

GALLIUM NITRIDE;

EID: 0035557622     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)