Microcrystalline silicon solar cells prepared by 13.56 MHz PECVD at high growth rates: Solar cell and material properties

Materials Research Society Symposium - Proceedings

Volumn 664, Issue , 2001, Pages A2551-A2556

  Roschek, Tobias ^a   Rech, Bernd ^a   Beyer, Wolfhard ^a   Werner, Peter ^a   Edelman, Felix ^a   Chack, Albert ^a   Weil, Raoul ^a   Beserman, Robert ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; ION BOMBARDMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; RAMAN SPECTROSCOPY; RATE CONSTANTS; TRANSMISSION ELECTRON MICROSCOPY; VOLUME FRACTION;

DEPOSITION PARAMETERS;

SILICON SOLAR CELLS;

EID: 0035557339     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-664-a25.5.1     Document Type: Article

References (13)