Effect of extended defects on the enhanced diffusion of phosphorus implanted silicon

Materials Research Society Symposium - Proceedings

Volumn 568, Issue , 1999, Pages 199-204

  Keys, P H ^a   Li, J H ^a   Heitman, E ^a   Packan, P A ^b   Law, M E ^a   Jones, K S ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; ION IMPLANTATION; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

DOT DEFECTS; PHOSPHORUS INTERSTITIAL CLUSTERS; TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING SILICON;

EID: 0032681503     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-568-199     Document Type: Article

References (10)

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