SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 669, Issue , 2001, Pages J4191-J4196

Modeling of boron implantation into Si with decaborane ions

(3) Insepov, Zinetulla a Sosnowski, Marek a Yamada, Isao a

a UNIVERSITY OF HYOGO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ION IMPLANTATION; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; MOS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SPUTTER DEPOSITION; SURFACE PHENOMENA; THIN FILMS;

SURFACE ATOMS;

SEMICONDUCTING BORON;

EID: 0035556422 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: 10.1557/proc-669-j4.19 Document Type: Article

Times cited : (1)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.