Range and damage distribution in cluster ion implantation

Materials Research Society Symposium - Proceedings

Volumn 438, Issue , 1996, Pages 363-374

  Yamada, I ^a   Matsuo, J ^a   Jones, E C ^a   Takeuchi, D ^a   Aoki, T ^a   Goto, K ^a   Sugii, T ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CRYSTAL DEFECTS; ELECTRIC RESISTANCE; ION BEAMS; ION BOMBARDMENT; IONS; SEMICONDUCTOR JUNCTIONS;

CLUSTER ION IMPLANTATION; DOPANT REDISTRIBUTION; IMPLANT DAMAGE DISTRIBUTION; NONLINEAR CLUSTER EFFECTS; SHALLOW JUNCTION FORMATION; SHEET RESISTANCE;

ION IMPLANTATION;

EID: 0030362281     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-438-363     Document Type: Conference Paper

References (18)