SCOPUS 정보 검색 플랫폼

Volumn 233, Issue 4, 2001, Pages 785-790

The formation mechanism of self-assembled CdSe quantum dots

(8) Yang, Yi a Shen, D Z a Zhang, J Y a Fan, X W a Li, B S a Lu, Y M a Liu, Y C a Liu, Y N a

Author keywords

A1. atomic force microscopy; A1. growth models; A1. low dimensional structures; A3. metalorganic chemical vapor deposition; B1. cadmium compounds; B2. Semiconducting II VI materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIFFUSION; DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; SELF ASSEMBLY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN; STRESS RELAXATION; SUBSTRATES; SURFACE REACTIONS;

LOW DIMENSIONAL STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035546559 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01644-X Document Type: Article

Times cited : (6)

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