Postannealing effect of GaN on reactive ion beam pre-treated sapphire

Journal of the Korean Physical Society

Volumn 39, Issue SUPPL. Part 1, 2001, Pages

  Lee, Sang Jin ^a   Byun, Dongjin ^a   Ko, Jaejung ^a   Hong, Chang Hee ^b   Kim, Gyeungho ^c  

^a Korea University   (South Korea)

^b Chonbuk National University   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035542119     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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