Reactive ion (N2+) beam pretreatment of sapphire for GaN growth

Thin Solid Films

Volumn 326, Issue 1-2, 1998, Pages 151-153

  Byun, Dongjin ^a   Jeong, Jaesik ^a,b   Kim, Hyun Jeong ^a,b   Koh, Seok Keun ^b   Choi, Won Kook ^b   Park, Dalkeun ^b   Kum, Dong Wha ^b  

^a Korea University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Atomic force microscopy; Chemical vapor deposition; Gallium nitride; Reactive ion beam

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; NITRIDES; REACTIVE ION ETCHING; SEMICONDUCTOR GROWTH; SUBSTRATES;

NITRIDE SEMICONDUCTORS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032482846     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00561-6     Document Type: Article

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