2DEG characteristics of AlN/GaN heterointerface on sapphire substrates grown by plasma-assisted MBE

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 2, 2001, Pages 613-616

  Jeganathan, K ^a   Ide, T ^a   Shen, S X Q ^a   Shimizu, M ^a   Okumura, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035540235     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:2<613::AID-PSSB613>3.0.CO;2-U     Document Type: Article

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