Polarity inversion by supplying group-III source first in MOMBE of GaN/AIN or GaN on GaAs (111)B (as surface)

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 2, 2001, Pages 549-552

  Hasegawa, F ^a   Takahashi, O ^a   Nakayama, T ^a   Souda, R ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035540221     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:2<549::AID-PSSB549>3.0.CO;2-Z     Document Type: Article

References (8)

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