Theoretical analysis of strain distribution, carrier spectrum and gain in GaN-based hexagonal QDs

Thin Solid Films

Volumn 364, Issue 1, 2000, Pages 291-295

  Andreev, A D ^a   O'Reilly, E P ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL SYMMETRY; ELASTIC MODULI; ELECTRON TRANSITIONS; ENERGY GAP; NITRIDES; PIEZOELECTRIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; STRAIN; STRESS CONCENTRATION;

ALUMINUM GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; PADE APPROXIMATION; QUANTUM DOT LASERS;

SEMICONDUCTOR LASERS;

EID: 0033876544     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00912-8     Document Type: Article

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