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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1562-1566

Surfactant-mediated growth and characterization of Ge(211)/Si(211) heterostructures grown by molecular beam epitaxy

(5) Tari, S a Brill, G a Sivananthan, S a Floyd, M b Smith, David J b

a UNIVERSITY OF ILLINOIS AT CHICAGO (United States)

b ARIZONA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; MOLECULAR BEAM EPITAXY; NUCLEATION; RAMAN SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SURFACE ACTIVE AGENTS; SURFACE STRUCTURE; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; OVERALL LAYER QUALITY; STRUCTURAL MODEL; SURFACTANT-MEDIATED GROWTH;

HETEROJUNCTIONS;

EID: 0035535373 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1377588 Document Type: Conference Paper

Times cited : (4)

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