Raman spectroscopy of strained GeSi alloys deposited on Ge substrates

Applied Physics A: Materials Science and Processing

Volumn 62, Issue 4, 1996, Pages 387-390

  Gu, S ^a   Qin, L ^a   Zhang, R ^a   Zhu, X ^a   Zheng, Y ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPOSITION; GERMANIUM ALLOYS; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM; STRAIN; SUBSTRATES;

RAMAN SHIFTS; SILICON SUBSTRATES; STRAIN RATIO;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0030126126     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF01594238     Document Type: Article

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