Surfactant-mediated growth of Ge/Si(0 0 1) studied by Raman spectroscopy and TEM

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 538-541

  Brill, G ^a   Smith, David J ^b   Chandrasekhar, D ^b   Gogotsi, Y ^c   Prociuk, A ^a   Sivananthan, S ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c University of Illinois Chicago   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE ACTIVE AGENTS; TRANSMISSION ELECTRON MICROSCOPY;

CROSS-SECTIONAL ELECTRON MICROGRAPHS; STRANSKI-KRASTANOV GROWTH MODE; SURFACTANT-MEDIATED EPITAXY;

MOLECULAR BEAM EPITAXY;

EID: 0032683223     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01410-9     Document Type: Article

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