Metal-insulator-semiconductor Schottky barrier structures fabricated using interfacial BN layers grown on GaN and SiC for optoelectronic device applications

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 1235-1238

  Starikov, D ^a   Badi, N ^a   Berishev, I ^a   Medelci, N ^a   Kameli, O ^a   Sayhi, M ^a   Zomorrodian, V ^a   Bensaoula, A ^a  

^a UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010686402     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581802     Document Type: Article

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