Fabrication and thermal-chemical stability of magnetoresistive random-access memory cells using α-Fe 2O 3 bottom spin valves

IEEE Transactions on Magnetics

Volumn 37, Issue 6 I, 2001, Pages 3960-3968

  Bae, Seongtae ^a,b   Zurn, Shayne ^a,c   Egelhoff Jr , William F ^d   Chen, P J ^d   Sheppard, Larry ^c   Torok, Edward James ^c   Judy, Jack H ^a,b  

^a IEEE   (United States)

^b University of Minnesota   (United States)

^c Integrated Magnetoelectronics Company   (United States)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Fe 2O 3 giant magnetoresistance (GMR) spin valve; Magnetoresistive random access memory (MRAM) fabrication; SPICE modeling; Thermal and chemical stability

Indexed keywords

CHEMICAL STABILITY;

ANTIFERROMAGNETIC MATERIALS; CORROSION RESISTANCE; FABRICATION; GIANT MAGNETORESISTANCE; IRON OXIDES; RANDOM ACCESS STORAGE; THERMODYNAMIC STABILITY;

MAGNETIC STORAGE;

EID: 0035517410     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.966133     Document Type: Article

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