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Thin Solid Films

Volumn 398, Issue 399, 2001, Pages 544-548

Integration of MOCVD titanium nitride with collimated titanium and ion metal plasma titanium for 0.18-μm logic process

(8) Lan, J K a Wang, Y L b,c Lo, K Y d Liu, C P e Liu, C W b,c Wang, J K b Cheng, Y L b Chau, C G a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (Taiwan)

c National Chi Nan University (China)

d NATIONAL CHIAYI UNIVERSITY (China)

e NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

Collimated titanium; Ion metal plasma (IMP) titanium; Vias resistance

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; GRAIN GROWTH; GRAIN SIZE AND SHAPE; ION BEAMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; TITANIUM NITRIDE;

FOCUSED ION BEAMS (FIB);

THIN FILMS;

EID: 0035507129 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)01316-5 Document Type: Article

Times cited : (10)

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