Ionized metal plasma deposition of titanium and titanium nitride for deep contact applications

Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998

Volumn 1998-June, Issue , 1998, Pages 262-264

  Yoo, B Y ^a   Park, Y H ^a   Lee, H D ^a   Kim, J H ^a   Kang, H K ^a   Lee, M Y ^a   Wang, H G ^b   Lee, K S ^b   Van Gogh, J ^b   Chu, C H ^b   Lai, S ^b   McClintock, B ^b   Edelstein, S ^b   Chen, F ^b  

^a SAMSUNG Electronics   (South Korea)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CONTACT RESISTANCE; IONIZATION; METALLIC FILMS; TIN;

CRYSTALLOGRAPHIC ORIENTATIONS; HIGH ASPECT RATIO; IONIZED METAL PLASMA PVD; IONIZED METAL PLASMAS; SUBSTRATE BIAS; TI FILM; TIN FILMS;

TITANIUM NITRIDE;

EID: 77957075592     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1998.704917     Document Type: Conference Paper

References (2)

1. S.M. Rossnagel, "Ionized Magnetron Sputtering (IPVD) for Lining and Filling Trenches and Vias at Room Temperature.", VMIC, 1995, p. 576
2. Y. Tanaka, Takehito Tanimoto, Prabu Gopalraja, John Forster, Zheng Xu, "Ionized Metal Plasma Deposition of Titanium and Titanium Nitride.", VlMC, 1997, p. 437