Floating-zone growth of GaAs

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 239-244

  Croll A ^a   Schweizer, M ^a   Tegetmeier, A ^a   Benz, K W ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DOPANT STRIATIONS; FLOATING ZONE METHOD; MARANGONI CONVECTION;

SINGLE CRYSTALS;

EID: 0030230321     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00059-0     Document Type: Article

References (7)

1. A. Cröll, W. Müller-Sebert, R. Nitsche and K.W. Benz, Microgravity Sci. Technol. III/4 (1991) 204.
2. G. Müller and R. Rupp, Cryst. Properties Preparation 35 (1991) 138.
3. A. Cröll, A. Tegetmeier, G. Nagel and K.W. Benz, Cryst. Res. Technol. 29 (1994) 335.
4. A. Tegetmeier, A. Cröll and K.W. Benz, in preparation.
5. D.T.J. Hurle, in: Progress in Materials Science, Vol. 10 (Pergamon, Oxford, 1963) p, 81.
6. F.-M. Herrmann, PhD Thesis, University of Erlangen, 1994.
7. Th. Späth, Masters Thesis, University of Erlangen, 1993.