Optimization of layer structure for InGaAs channel pseudomorphic HEMTs

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 757-760

  Pearson, J L ^a   Holland, M C ^a   Stanley, C R ^a   Long, A R ^b   Skuras, E ^a   Asenov, A ^a   Davies, J H ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; HETEROJUNCTIONS; MAGNETIC ANISOTROPY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

MAGNETO-TRANSPORT MEASUREMENTS; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (P-HEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032643205     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01462-6     Document Type: Article

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