Nondestructive determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room-temperature photoluminescence spectra

Journal of Physics D: Applied Physics

Volumn 31, Issue 2, 1998, Pages 159-164

  Lu, Wu ^a   Lee, Jin Hee ^b   Prasad, Krishnamachar ^a   Ng, Geok Ing ^a   Lindström, Per ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c UMEÅ UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRONS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

HALL MEASUREMENTS; ROOM TEMPERATURE PHOTOLUMINESCENCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031677644     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/31/2/001     Document Type: Article

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