A masking approach for anisotropic silicon wet etching

Electrochemical and Solid-State Letters

Volumn 4, Issue 10, 2001, Pages

  Normand, P ^a   Beltsios, K ^b   Tserepi, A ^a   Aidinis, K ^c   Tsoukalas, D ^a   Cardinaud, C ^d  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^c UNIVERSITY OF ATHENS   (Greece)

^d UNIVERSITÉ DE NANTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; ANISOTROPY; DEFECTS; PLASMA ETCHING; PRESSURE EFFECTS; SOLUTIONS; SURFACE TREATMENT; THERMAL EFFECTS;

MASK DESTRUCTION; MASKING; PLASMA DURATION; PLASMA RADIO FREQUENCY POWER; PLASMA TREATMENT; WET ETCHING;

SILICON;

EID: 0035496828     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1398559     Document Type: Article

References (14)