Raman spectroscopic analysis of stress on GaAs-SiO2 interface and the effect of stress on tin diffusion in GaAs

Journal of Applied Physics

Volumn 80, Issue 6, 1996, Pages 3540-3545

  Harun ur Rashid, A B M ^a   Kishi, Masato ^a   Katoda, Takashi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010328531     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363271     Document Type: Article

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