Phase-locking of an InP/InGaP/InGaAs resonant tunneling diode relaxation oscillator by direct optical injection

Solid-State Electronics

Volumn 45, Issue 10, 2001, Pages 1827-1830

  Kahn, M ^a,b   Lasri, J ^a   Orenstein, M ^a   Ritter, D ^a   Eisenstein, G ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b OPTO+   (France)

Author keywords

Aluminium free device; GaInP GaInAs resonant tunneling diode; Locking range; On wafer relaxation oscillator

Indexed keywords

HARMONIC ANALYSIS; RESONANT CIRCUITS; SEMICONDUCTING INDIUM COMPOUNDS; SPURIOUS SIGNAL NOISE; TUNNEL DIODES;

PHASE LOCKING; RESONANT TUNNELING DIODES (RTD);

RELAXATION OSCILLATORS;

EID: 0035477998     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00170-8     Document Type: Article

References (11)

1. Oscillation up to 712 GHz in InAs/AlSb resonant-tunneling diodes
2. Direct optical frequency modulation and injection locking of resonant tunnel diode oscillator
3. Resonant-tunneling transmission-line relaxation oscillator
4. Resonant-tunneling-diode relaxation oscillators
5. Optoelectronic clock recovery circuit using resonant tunneling diode and uni-travelling-carrier photodiode
6. 0.53 as resonant tunneling diodes
7. 0.53 as resonant tunnelling diodes
8. Compact metalorganic molecular-beam epitaxy growth system
9. Growth of strained GaInP on InP by metalorganic molecular beam epitaxy for heterostructure field effect transistor application
10. A study of locking phenomena in oscillators