Room temperature operation of GaxIn1 - xP/Ga0.47In0.53As resonant tunneling diodes

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 359-362

  Cohen, G M ^a   Ritter, D ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Aluminum free devices; GaInP on InP; GaInP InGaAs resonant tunneling diode; MOMBE; Room temperature negative resistance; RTD

Indexed keywords

CURRENT DENSITY; ELECTRON TUNNELING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

ALUMINUM FREE DEVICES; RESONANT TUNNELING DIODES (RTD);

SEMICONDUCTOR DIODES;

EID: 0032097029     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00100-6     Document Type: Article

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