Resonant-tunneling transmission-line relaxation oscillator

Applied Physics Letters

Volumn 70, Issue 21, 1997, Pages 2787-2789

  Brown, E R ^a,c   Parker, C D ^a   Verghese, S ^a   Geis, M W ^a   Harvey, J F ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b U S ARMY RESEARCH OFFICE   (United States)

^c DEFENSE ADVANCED RESEARCH PROJECTS AGENCY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001411385     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119059     Document Type: Article

References (7)

1. C. L. Dennis, E. R. Brown, and S. Prasad. Proceedings of the International Semiconductor Device Symposium (University of Virginia, Charlot-tesville, 1993), p. 465.
2. R. Y. Yu, Y. Konishi, S. T. Allen, M. Reddy, and M. J. W. Rodwell, IEEE Microwave and Guided Wave Letters 4, 220 (1994).
3. E. R. Brown, J. R. Söderström, C. D. Parker, L. J. Mahoney, K. M. Molvar, and T. C. McGill, Appl. Phys. Lett. 58, 2291 (1991).
4. E. Ozbay, D. M. Bloom, D. H. Chow, and J. N. Schulman, IEEE Electron Device Lett. 14, (1993).
5. E. R. Brown, O. B. McMahon, L. J. Mahoney, and K. M. Molvar, Electron. Lett. 32, 938 (1996).
6. In the present experiments, the low-frequency bias-circuit oscillations occurred only with the I-V measurement instrument, not with the relaxation-oscillator circuit.
7. E. R. Brown, Ultrafast Electronics and Optoelectronics, edited by J. Shah (Optical Society of America, Washington, D.C., 1993), p. 91.