High-speed modulation of long-wavelength In1-xGaxAsyP1-y and In1-x-yGaxAlyAs strained quantum-well lasers

IEEE Journal of Quantum Electronics

Volumn 37, Issue 10, 2001, Pages 1283-1291

  Liu, G ^b   Chuang, S L ^a,c  

^a IEEE

^b W L GORE AND ASSOCIATES   (United States)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

Gain; InGaAlAs; InGaAsP; Microwave modulation; Strained quantum well lasers

Indexed keywords

BAND STRUCTURE; BANDWIDTH; CARRIER CONCENTRATION; GAIN MEASUREMENT; LIGHT MEASUREMENT; LIGHT MODULATION; OPTICAL COMMUNICATION; PHOTONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SPECTRUM ANALYSIS;

HAKKI-PAOLI METHOD; INDIUM GALLIUM ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIDE PHOSPHIDE; MICROWAVE MODULATION; OPTICAL GAIN MEASUREMENT; VALENCE BAND MIXING;

QUANTUM WELL LASERS;

EID: 0035474315     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.952540     Document Type: Article

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