Thermal behavior of residual strain in silicon-on-insulator bonded wafer and effects on electron mobility

Solid-State Electronics

Volumn 43, Issue 6, 1999, Pages 1117-1120

  Iida, Tsutomu ^a   Itoh, Takamasa ^a   Takano, Yukio ^a   Sandhu, Adarsh ^b   Shikama, Kazuyuki ^b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b TOKAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; SILICON ON INSULATOR TECHNOLOGY; STRAIN MEASUREMENT; TENSILE PROPERTIES;

RESIDUAL STRAIN;

SILICON WAFERS;

EID: 0032671855     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00035-0     Document Type: Article

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