Measurement of stress distribution in Si3N4 using AIN thin films

Journal of Materials Science Letters

Volumn 17, Issue 24, 1998, Pages 2093-2095

  Akiyama, M ^a   Xu, C N ^a   Nonaka, K ^a   Watanabe, T ^a   Usui, I ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Industrial Technology Center of Saga   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTAL ORIENTATION; ELECTRIC INSULATING MATERIALS; ELECTRIC POTENTIAL; LATTICE CONSTANTS; MAGNETRON SPUTTERING; POLYCRYSTALLINE MATERIALS; SILICON NITRIDE; SPUTTER DEPOSITION; STRESS CONCENTRATION; SURFACE ROUGHNESS; TRANSPARENCY;

ALUMINUM NITRIDE; GAUSSIAN DISTRIBUTION; SCHERRER'S EQUATION; X RAY ROCKING CURVES;

CERAMIC COATINGS;

EID: 0032278315     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1006636201394     Document Type: Article

References (13)

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