Diamond-coated cantilevers for Scanning Capacitance Microscopy applications

Microelectronics Reliability

Volumn 41, Issue 9-10, 2001, Pages 1459-1463

  Yabuhara, H ^a   Ciappa, M ^b   Fichtner, W ^b  

^a TOSHIBA CORPORATION   (Japan)

^b ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMONDS; MICROSCOPIC EXAMINATION; OXIDATION; PROBES; SEMICONDUCTING SILICON; ULTRATHIN FILMS;

DIAMOND-COATED CANTILEVERS; SCANNING CAPACITANCE MICROSCOPY;

MICROELECTRONICS;

EID: 0035456897     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00190-1     Document Type: Article

References (4)

1. Williams C C. Two-dimensional Dopant Profiling by Scanning Capacitance Microscopy. Annu. Rev. Mater. Sci.29 (1999) 471-504
2. De Wolf H, Stephenson R, Trenkler T, Clarysse T, Hantschel T and Vandervorst W. Status and review of 2D carrier profiling using SCM. J. Vac. Sci. Technol. B 18 (2000) 361-368
3. Malberti P, Ciampolini L, Ciappa M and Fichtner W. Quantification of Scanning Capacitance Microscopy Measurements for 2D Dopant Profiling. Microelectronics Reliability 40 (2000) 1395-1399
4. Malberti P, Ciampolini L, Ciappa M and Fichtner W. Experimental Investigation and 3D Simulation of Contrast Reversal Effects in Scanning Capacitance Microscopy. Proc. of the Characterization and Metrology for ULSI Technology (2001) 652-656