In situ observation of native oxide growth on a Si(100) surface using grazing incidence X-ray reflectivity and Fourier transform infrared spectrometer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 9 A, 2001, Pages 5312-5313

  Uemura, Satoshi ^a   Fujii, Masanori ^a   Hashimoto, Hideki ^b   Nagai, Naoto ^b  

^a 242 0001   (Japan)

^b TORAY RESEARCH CENTER INC   (Japan)

Author keywords

Fourier transform infrared spectrometer; FTIR; GIXR; Grazing incidence X ray reflectivity; In situ observation; Native oxide; Silicon surface

Indexed keywords

ATMOSPHERIC PRESSURE; COMPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; OXIDES; SEMICONDUCTOR GROWTH; X RAY ANALYSIS;

GRAZING INCIDENCE X RAY REFLECTIVITY; NATIVE OXIDE;

SEMICONDUCTING SILICON;

EID: 0035456676     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.5312     Document Type: Article

References (8)