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Volumn 472, Issue , 1997, Pages 457-462
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Improvement of the long-term stability of polysilicon IC-resistors by fluorine doping
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
BOND STRENGTH (CHEMICAL);
ELECTRIC CONDUCTIVITY MEASUREMENT;
FLUORINE;
GRAIN BOUNDARIES;
HYDROGEN;
ION IMPLANTATION;
PLASMAS;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
STRESS ANALYSIS;
POLYSILICON RESISTORS;
RESISTORS;
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EID: 0031364107
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-472-457 Document Type: Conference Paper |
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Times cited : (4)
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References (10)
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