Effect of post-nitride-passivation processing on the long-term stability of polysilicon integrated circuit resistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 2, 2000, Pages 690-694

  Rydberg, Matts ^a,b   Smith, Ulf ^a,b   Sjödin, Håkan ^b  

^a UPPSALA UNIVERSITY   (Sweden)

^b ERICSSON RADIO SYSTEMS AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; GRAIN BOUNDARIES; HYDROGEN BONDS; INTEGRATED CIRCUIT LAYOUT; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

LOW-PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); POLYSILICON RESISTORS; POST-NITRIDE-PASSIVATION PROCESSING;

RESISTORS;

EID: 0034156463     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591260     Document Type: Article

References (22)

1. M. Rydberg and U. Smith, IEEE Trans. Electron Devices 47, 417 (2000).
2. T. I. Kamins, Polycrystalline Silicon for Integrated Circuits and Displays, 2nd ed. (Kluwer Academic, Boston, MA 1998).
3. C. G. Van de Walle and R. A. Street, Phys. Rev. B 49, 14 766 (1994).
4. R. Hull, Properties of Crystalline Silicon (INSPEC, London, 1999).
5. M. Rydberg and U. Smith, Thin Solid Films (submitted).
6. S. M. Sze, VLSI Technology, 2nd ed. (McGraw-Hill, New York, 1988).
7. N. H. Nickel, W. B. Jackson, and N. M. Johnson, Mod. Phys. Lett. B 8, 1627 (1994).
8. F. Cleri, P. Keblinski, L. Colombo, S. R. Phillpot, and D. Wolf, Phys. Rev. B 57, 6247 (1998).
9. W. A. Lanford and M. J. Rand, J. Appl. Phys. 49, 2473 (1978).
10. J. Z. Xie, S. P. Murarka, X. S. Guo, and W. A. Lanford, J. Vac. Sci. Technol. B 7, 150 (1989).
11. S. V. Nguyen, J. Electron. Mater. 16, 275 (1987).
12. N. D. Arora, J. R. Hauser, and D. J. Roulston, IEEE Trans. Electron Devices 29, 292 (1982).
13. N. C. C. Lu, L. Grezberg, C.-Y. Lu, and J. D. Meindl, IEEE Trans. Electron Devices 28, 818 (1981).
14. T. I. Kamins, M. M. Mandurah, and K. C. Saraswat, J. Electrochem. Soc. 125, 927 (1978).
15. C. G. Van de Walle, Phys. Rev. B 49, 4579 (1994).
16. C. G. Van de Walle and N. H. Nickel, Phys. Rev. B 51, 2336 (1995).
17. N. M. Johnson, C. Herring, and D. J. Chadi, Phys. Rev. Lett. 56, 769 (1986).
18. C. G. Van de Walle, P. J. D. Denteneer, Y. Bar-Yam, and S. T. Panteloides, Phys. Rev. B 39, 10791 (1989).
19. M. Rydberg, U. Smith, A. Söderbärg, and H. Hansson, Solid State Phenom. 51-52, 561 (1996).
20. J. I. Pankove, Semiconductors and Semimetals (Academic, London, 1991), Vol. 34.
21. N. H. Nickel, N. M. Johnson, and W. B. Jackson, Solid State Phenom. 37-38, 367 (1994).
22. N. M. Johnson, D. K. Biegelsen, and M. D. Moyer, Appl. Phys. Lett. 40, 882 (1982).