TEM study of stacking faults formed in pairs in a ZnSe epitaxial layer on a GaAs(001) buffer layer

Materials Research Society Symposium - Proceedings

Volumn 399, Issue , 1996, Pages 485-490

  Tanimura, J ^a   Wada, O ^a   Endoh, Y ^a   Imaizumi, M ^a   Ogama, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); FILM GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

BUFFER LAYER; BURGERS VECTOR; FORMATION MECHANICS; HILLOCKS; PARTIAL DISLOCATIONS; POLARITY; SHOCKLEY TYPE;

STACKING FAULTS;

EID: 0029701101     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)