Influence of the three dimensionality of the HF electromagnetic field on resistivity variations in Si single crystals during FZ growth

Journal of Crystal Growth

Volumn 216, Issue 1, 2000, Pages 204-219

  Ratnieks, G ^a   Muiznieks, A ^a,b   Buligins, L ^a   Raming, G ^b   Muhlbauer A ^b   Ludge A ^c   Riemann, H ^c  

^a UNIVERSITY OF LATVIA   (Latvia)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BUOYANCY; COMPOSITION EFFECTS; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTROMAGNETIC FIELD EFFECTS; HYDRODYNAMICS; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

FLOATING ZONE GROWTH; PHOTO-SCANNING METHOD;

SEMICONDUCTING SILICON;

EID: 0033691504     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00354-7     Document Type: Article

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