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Journal of the Electrochemical Society

Volumn 137, Issue 6, 1990, Pages 1918-1924

The Effects of Fluorine Atoms in High-Dose Arsenic or Phosphorus Ion Implanted Silicon

(1) Kato, Juri a

a SEIKO EPSON CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORINE COMPOUNDS - DIFFUSION; SEMICONDUCTOR MATERIALS - DOPING;

FLUORINE ION IMPLANTATION; HIGH-DOSE ION IMPLANTATION;

SEMICONDUCTING SILICON;

EID: 0025449486 PISSN: 00134651 EISSN: 19457111 Source Type: Journal
DOI: 10.1149/1.2086832 Document Type: Article

Times cited : (22)

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