High quality thermal oxide on LPSOI formed by high temperature enhanced MILC

IEEE Electron Device Letters

Volumn 22, Issue 8, 2001, Pages 384-386

  Chan, Alain Chun Keung ^b   Wang, Hongmei ^b   Chan, Mansun J ^a,b  

^a IEEE

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Flash; Oxide quality; Polysilicon

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; ELECTRIC BREAKDOWN; GRAIN BOUNDARIES; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; POLYSILICON; PROM; SURFACE ROUGHNESS;

LARGE-GRAIN POLYSILICON-ON-INSULATOR (LPSOI);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035424742     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.936351     Document Type: Article

References (9)

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