The characteristics of polysilicon oxide grown in pure n2o

IEEE Transactions on Electron Devices

Volumn 43, Issue 2, 1996, Pages 326-331

  Lai, Chao ^a   Lei, Tan ^a   Lee, Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE MEASUREMENT; ELECTRODES; LEAKAGE CURRENTS; MORPHOLOGY; NITROGEN OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE MEASUREMENT; CRITICAL ELECTRIC FIELD; ELECTRA BARRIER HEIGHT; FOWLER-NORDHEIM STRESS; POLYOXIDES; POLYSILICON OXIDE GROWN; SHEET RESISTANCE; WET OXIDATION;

NONVOLATILE STORAGE;

EID: 0030083374     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.481735     Document Type: Article

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