SCOPUS 정보 검색 플랫폼

Journal of Non-Crystalline Solids

Volumn 288, Issue 1-3, 2001, Pages 30-36

TEA CO2 pulsed laser deposition of silicon suboxide films

(4) Dínek, Vladislav a Pola, Josef a Bastl, Zdenk b Ubrt, Jan c

a INSTITUTE OF CHEMICAL PROCESS FUNDAMENTALS (Czech Republic)

b J HEYROVSKÝ INSTITUTE OF PHYSICAL CHEMISTRY (Czech Republic)

c INSTITUTE OF INORGANIC CHEMISTRY (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DIOXIDE LASERS; FILM GROWTH; INFRARED SPECTROSCOPY; OXYGEN; PULSED LASER DEPOSITION; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICA; THERMAL EFFECTS; VACUUM APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

PULSED LASER ABLATION (PLA);

SEMICONDUCTING FILMS;

EID: 0035422706 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(01)00609-3 Document Type: Article

Times cited : (22)

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