Nanoalignment mask fabricated directly on Si by AFM

Surface and Interface Analysis

Volumn 32, Issue 1, 2001, Pages 130-132

  Huang, WenHao ^a   Dang, Xueming ^a   Hu, Qiao ^a   Xia, Yi ^a   Telllo, Marta ^b   Calleja, Montserrat ^b   García, Ricardo ^b   Gomez Rodnguez J M ^c   Baro, A ^c  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^c UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

AFM; Mask; Nanopositioning; Two dimensional grid

Indexed keywords

ADSORPTION; ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; IMAGE ANALYSIS; MICROELECTROMECHANICAL DEVICES; MONOLAYERS; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS;

NONALIGNMENT MASKS;

MASKS;

EID: 0035420569     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1023     Document Type: Article

References (9)