Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure in different gas atmospheres

Solid-State Electronics

Volumn 45, Issue 8, 2001, Pages 1383-1389

  Beichele, M ^a   Bauer, A J ^a   Herden, M ^a   Ryssel, H ^a,b  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Low pressure rapid thermal oxidation; N2O oxidation; Nitrided oxides; Oxide reliability; Ultra thin oxides

Indexed keywords

GROWTH (MATERIALS); INTERFACES (MATERIALS); MOS CAPACITORS; NITRIDING; OXIDATION;

RAPID THERMAL OXIDATION (RTO);

NITROGEN OXIDES;

EID: 0035416975     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00061-2     Document Type: Article

References (16)

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