Electrical characterization of ruthenium-doped InP grown by low pressure hydride vapor phase epitaxy

Electrochemical and Solid-State Letters

Volumn 4, Issue 6, 2001, Pages

  Soderstrom D ^a   Lourdudoss, S ^a   Wallnas M ^a   Dadgar, A ^b   Stenzel, O ^b   Bimberg, D ^b   Schumann, H ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; CURVE FITTING; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; PRESSURE EFFECTS; RUTHENIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; VAPOR PHASE EPITAXY; VOLTAGE MEASUREMENT;

ARRHENIUS PLOTS; ELECTRON INJECTION; HOLE INJECTION; LOW PRESSURE HYDRIDE VAPOR PHASE EPITAXY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0035383691     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1369219     Document Type: Article

References (9)